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IXYS IXFT80N65X2HV
MOSFET N-CH
- Manufacturer
- IXYS
- Datasheet
- Price
- 10.04
- Stock
- 0
Product Details
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 850V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3700pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 40A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Vgs(th) (Max) @ Id
- 5.5V @ 4mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 145mOhm @ 500mA, 10V
- Series
- HiPerFET™
- Power Dissipation (Max)
- 860W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-268
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 98nC @ 10V