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Infineon Technologies SPD50N03S207GBTMA1
MOSFET N-CH 30V 50A TO252-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Vgs(th) (Max) @ Id
- 2.2V @ 250µA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.2mOhm @ 30A, 10V
- Series
- OptiMOS™
- Power Dissipation (Max)
- 2.8W (Ta), 89W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- MG-WDSON-2, CanPAK M™
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 169nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 16900pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 39A (Ta), 180A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 3-WDSON