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Infineon Technologies SPD30N03S2L20GBTMA1
MOSFET N-CH 30V 30A TO252-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 37A (Ta), 170A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 3-WDSON
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.2mOhm @ 30A, 10V
- Series
- OptiMOS™
- Power Dissipation (Max)
- 2.8W (Ta), 57W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- MG-WDSON-2, CanPAK M™
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 67nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 25V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4900pF @ 12V