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Infineon Technologies SPD06N80C3ATMA1

MOSFET N-CH 800V 6A 3TO252

Manufacturer
Infineon Technologies
Datasheet
Price
0
Stock
24214

Product Details

Rds On (Max) @ Id, Vgs
1.6mOhm @ 20A, 10V
Series
-
Power Dissipation (Max)
2.3W (Ta), 83W (Tc)
FET Type
N-Channel
Supplier Device Package
8-DFN (5x6)
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
88nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
40V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
6550pF @ 20V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
27A (Ta), 85A (Tc)
Part Status
Not For New Designs
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mounting Type
Surface Mount
Package / Case
8-PowerSMD, Flat Leads
Vgs(th) (Max) @ Id
2.4V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)