Infineon Technologies SPB80N03S2L-06

Product Details

FET Type

N-Channel

Supplier Device Package

PG-TO252-3

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

9nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

560V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

190pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

1.8A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

3.9V @ 80µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

3Ohm @ 1.1A, 10V

Series

CoolMOS™

Power Dissipation (Max)

25W (Tc)