Infineon Technologies SPA20N65C3XKSA1

Product Details

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

1000V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1830pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

6V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

2.8Ohm @ 2.5A, 10V

Series

HiPerFET™, PolarP2™

Power Dissipation (Max)

250W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-263 (IXFA)

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

33.4nC @ 10V