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Infineon Technologies ISS17EP06LMXTSA1
MOSFET P-CH 60V SOT23-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.1
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 24mOhm @ 6.2A, 4.5V
- Series
- -
- Power Dissipation (Max)
- 1.2W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- TSOT-26
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 8.3nC @ 4.5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 856pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 6.2A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA