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Infineon Technologies ISP13DP06NMSATMA1
MOSFET P-CH 60V SOT223-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Vgs(th) (Max) @ Id
- 2V @ 270µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 250mOhm @ 1.9A, 10V
- Power Dissipation (Max)
- 1.8W (Ta), 5W (Tc)
- Series
- OptiMOS™
- Supplier Device Package
- PG-SOT223
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 13.9nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 420pF @ 30V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 1.9A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-3