Infineon Technologies IRLL3303

Product Details

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

60mOhm @ 5.3A, 10V

Series

HEXFET®

Power Dissipation (Max)

2.5W (Tc)

FET Type

P-Channel

Supplier Device Package

8-SO

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±12V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

860pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

5.3A (Ta)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount