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Infineon Technologies IRFR120NPBF
MOSFET N-CH 100V 9.4A DPAK
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 210mOhm @ 5.6A, 10V
- Power Dissipation (Max)
- 48W (Tc)
- Series
- HEXFET®
- Supplier Device Package
- D-Pak
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 25nC @ 10V
- Packaging
- Tape & Reel (TR)
- Drain to Source Voltage (Vdss)
- 100V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 330pF @ 25V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 9.4A (Tc)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Part Status
- Discontinued at Digi-Key
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 4V @ 250µA