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Infineon Technologies IRFH5215TR2PBF
MOSFET N-CH 150V 5.0A PQFN
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 99.9mOhm @ 5.8A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 3.6W (Ta), 8.3W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PQFN (5x6)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 30nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 200V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1380pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 3.8A (Ta), 20A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-VQFN Exposed Pad
- Vgs(th) (Max) @ Id
- 5V @ 100µA
- Operating Temperature
- -55°C ~ 150°C (TJ)