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Infineon Technologies IRFH5210TR2PBF
MOSFET N-CH 100V 10A 5X6 PQFN
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Type
- N-Channel
- Supplier Device Package
- 8-PQFN (5x6)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 35nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1256pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 11A (Ta), 40A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Vgs(th) (Max) @ Id
- 4V @ 50µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 14.4mOhm @ 24A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 3.6W (Ta), 46W (Tc)