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Infineon Technologies IRFH5015TR2PBF
MOSFET N-CH 150V 10A 8VQFN
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- HEXFET®
- Power Dissipation (Max)
- 3.6W (Ta), 8.3W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-PQFN (5x6)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 54nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 200V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2290pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 5.1A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 5V @ 150µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 55mOhm @ 7.5A, 10V