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Infineon Technologies IRFH3707TR2PBF
MOSFET N-CH 30V 12A PQFN33
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Package / Case
- 8-PowerVDFN
- Vgs(th) (Max) @ Id
- 4.9V @ 100µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 18mOhm @ 9.3A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 3.1W (Ta), 8.3W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PQFN (5x6) Single Die
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 36nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1510pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 9.3A (Ta), 46A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount