Infineon Technologies IRFB3607GPBF

Product Details

Vgs(th) (Max) @ Id

2.4V @ 25µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

12.1mOhm @ 7.8A, 20V

Series

HEXFET®

Power Dissipation (Max)

2.5W (Ta)

FET Type

P-Channel

Supplier Device Package

8-SO

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

14nC @ 4.5V

Vgs (Max)

±25V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1270pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

9.8A (Ta)

Part Status

Discontinued at Digi-Key

Drive Voltage (Max Rds On, Min Rds On)

10V, 20V

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)