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Infineon Technologies IRF8910GTRPBF
MOSFET 2N-CH 20V 10A 8-SOIC
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 8.6mOhm @ 12A, 10V
- Series
- HEXFET®
- Supplier Device Package
- PQFN (5x6)
- FET Type
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs
- 12nC @ 4.5V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 30V
- FET Feature
- Logic Level Gate
- Input Capacitance (Ciss) (Max) @ Vds
- 1060pF @ 15V
- Part Status
- Obsolete
- Current - Continuous Drain (Id) @ 25°C
- 13A, 28A
- Power - Max
- 2.4W, 3.4W
- Mounting Type
- Surface Mount
- Package / Case
- 18-PowerVQFN
- Base Part Number
- IRFH7911PBF
- Vgs(th) (Max) @ Id
- 2.35V @ 25µA