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Infineon Technologies IRF7465
MOSFET N-CH 150V 1.9A 8-SOIC
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 4A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 85mOhm @ 4A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 2W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- Micro6™(TSOP-6)
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 17nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 535pF @ 25V