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Infineon Technologies IRF7324D1

MOSFET P-CH 20V 2.2A 8-SOIC

Manufacturer
Infineon Technologies
Datasheet
Price
0
Stock
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Product Details

Rds On (Max) @ Id, Vgs
100mOhm @ 1.8A, 10V
Power Dissipation (Max)
2W (Ta)
Series
FETKY™
Supplier Device Package
8-SO
FET Type
P-Channel
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Packaging
Cut Tape (CT)
Drain to Source Voltage (Vdss)
30V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440pF @ 25V
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
3.6A (Ta)
FET Feature
Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id
1V @ 250µA