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Infineon Technologies IRF6668TR1
MOSFET N-CH 80V 55A DIRECTFET-MZ
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 12A (Ta), 39A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- DirectFET™ Isometric S1
- Vgs(th) (Max) @ Id
- 2.35V @ 25µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 7.8mOhm @ 12A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 1.8W (Ta), 21W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- DIRECTFET S1
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 12nC @ 4.5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 25V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1010pF @ 13V