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Infineon Technologies IRF640NLPBF
MOSFET N-CH 200V 18A TO-262
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 1.68
- Stock
- 2809
Product Details
- Series
- MDmesh™ II Plus
- Rds On (Max) @ Id, Vgs
- 600mOhm @ 3A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 85W (Tc)
- Packaging
- Tube
- Supplier Device Package
- TO-220
- Vgs (Max)
- ±25V
- Gate Charge (Qg) (Max) @ Vgs
- 13.5nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 600V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 400pF @ 100V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 7.5A (Tc)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-220-3
- Base Part Number
- STP10
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)