Infineon Technologies IRF3415S

Product Details

FET Type

N-Channel

Supplier Device Package

D2PAK

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1360pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

23mOhm @ 29A, 10V

Series

HEXFET®

Power Dissipation (Max)

110W (Tc)