Infineon Technologies IRF200B211

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

12000pF @ 30V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

22A (Ta), 90A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

3-WDSON

Vgs(th) (Max) @ Id

4V @ 102µA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

2.8mOhm @ 30A, 10V

Series

OptiMOS™

Power Dissipation (Max)

2.2W (Ta), 78W (Tc)

FET Type

N-Channel

Supplier Device Package

MG-WDSON-2, CanPAK M™

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

143nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V