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Infineon Technologies IPZ60R060C7XKSA1

MOSFET N-CH 600V 35A TO247-4

Manufacturer
Infineon Technologies
Datasheet
Price
6.1
Stock
0

Product Details

Series
PolarP2™
Power Dissipation (Max)
960W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-3P
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
108nC @ 10V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
500V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
6800pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
52A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Vgs(th) (Max) @ Id
4.5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
120mOhm @ 26A, 10V