Infineon Technologies IPW65R280E6FKSA1

Product Details

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

1.1V @ 50µA

Operating Temperature

-50°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

4mOhm @ 21A, 4.5V

Series

HEXFET®

Power Dissipation (Max)

63W (Tc)

FET Type

N-Channel

Supplier Device Package

DPAK

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

72nC @ 4.5V

Vgs (Max)

±12V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3770pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Part Status

Discontinued at Digi-Key

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Mounting Type

Surface Mount