Infineon Technologies IPW65R110CFDAFKSA1

Product Details

Vgs (Max)

+18V, -8V

Drain to Source Voltage (Vdss)

900V

Technology

SiCFET (Silicon Carbide)

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 600V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

15V

Mounting Type

Through Hole

Package / Case

TO-247-3

Vgs(th) (Max) @ Id

3.5V @ 3mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

155mOhm @ 15A, 15V

Series

Automotive, AEC-Q101, E

Power Dissipation (Max)

97W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-247-3

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

17.3nC @ 15V