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Infineon Technologies IPW65R045C7300XKSA1
MOSFET N-CH 650V TO-247-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1nF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 3.5A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 1.25V @ 250µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 55mOhm @ 2.4A, 4.5V
- Power Dissipation (Max)
- 510mW (Ta), 4.15W (Tc)
- Series
- -
- Supplier Device Package
- TO-236AB
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 11nC @ 4.5V