Images are for reference only. See Product Specifications for product details
Infineon Technologies IPW65R041CFDFKSA1
MOSFET N CH 650V 68.5A PG-TO247
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 11.61
- Stock
- 1182
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 26000pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 320A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3.5mOhm @ 100A, 10V
- Series
- HiPerFET™, TrenchT2™
- Power Dissipation (Max)
- 1000W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-247AD (IXFH)
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 430nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V