Images are for reference only. See Product Specifications for product details
Infineon Technologies IPW60R190C6FKSA1
MOSFET N-CH 600V 20.2A TO247
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 3.36
- Stock
- 64
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 17.3A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 3.5V @ 900µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 200mOhm @ 8.7A, 10V
- Series
- DTMOSIV
- Power Dissipation (Max)
- 165W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-247
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 45nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 650V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1800pF @ 300V