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Infineon Technologies IPT60R050G7XTMA1

MOSFET N-CH 650V 44A HSOF-8

Manufacturer
Infineon Technologies
Datasheet
Price
0
Stock
1829

Product Details

Package / Case
8-PowerSFN
Vgs(th) (Max) @ Id
3.8V @ 230µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
1.4mOhm @ 100A, 10V
Series
OptiMOS™-5
Power Dissipation (Max)
300W (Tc)
FET Type
N-Channel
Supplier Device Package
PG-HSOF-8-1
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
187nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
80V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
13178pF @ 40V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
300A (DC)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Mounting Type
Surface Mount