Images are for reference only. See Product Specifications for product details
Infineon Technologies IPT60R028G7XTMA1
MOSFET N-CH 600V 75A HSOF-8
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 15.38
- Stock
- 1936
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- -
- Series
- CoolGaN™
- Power Dissipation (Max)
- 125W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-HSOF-8-3
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 600V
- Vgs (Max)
- -10V
- Input Capacitance (Ciss) (Max) @ Vds
- 380pF @ 400V
- Technology
- GaNFET (Gallium Nitride)
- Current - Continuous Drain (Id) @ 25°C
- 31A (Tc)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerSFN
- Vgs(th) (Max) @ Id
- 1.6V @ 2.6mA