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Infineon Technologies IPT020N10N3ATMA1
MOSFET N-CH 100V 300A 8HSOF
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 51
Product Details
- Vgs(th) (Max) @ Id
- 2.5V @ 7mA
- Operating Temperature
- -40°C ~ 140°C (TJ)
- Rds On (Max) @ Id, Vgs
- 10mOhm @ 20A, 5V
- Series
- eGaN®
- Power Dissipation (Max)
- -
- FET Type
- N-Channel
- Supplier Device Package
- Die
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 8.8nC @ 5V
- Vgs (Max)
- +6V, -4V
- Drain to Source Voltage (Vdss)
- 200V
- Technology
- GaNFET (Gallium Nitride)
- Input Capacitance (Ciss) (Max) @ Vds
- 950pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 48A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 5V
- Mounting Type
- Surface Mount
- Package / Case
- Die