Infineon Technologies IPSA70R2K0P7SAKMA1

Product Details

Vgs(th) (Max) @ Id

2.3V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

9.8mOhm @ 14A, 10V

Series

NexFET™

Power Dissipation (Max)

3.1W (Ta), 77W (Tc)

FET Type

N-Channel

Supplier Device Package

8-VSONP (5x6)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

11.1nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1770pF @ 30V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

50A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN