Infineon Technologies IPS80R900P7AKMA1

Product Details

Rds On (Max) @ Id, Vgs

1.4Ohm @ 2A, 10V

Series

-

Power Dissipation (Max)

38W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO252-3-1

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

600V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

3.2A (Tc)

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

3.9V @ 135µA

Operating Temperature

-55°C ~ 150°C (TJ)