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Infineon Technologies IPS80R600P7AKMA1
MOSFET N-CH 800V 8A TO251-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 1.59
- Stock
- 1480
Product Details
- FET Type
- N-Channel
- Supplier Device Package
- D-Pak
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 18nC @ 5V
- Vgs (Max)
- ±10V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 870pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 14A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 5V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 100mOhm @ 8.4A, 5V
- Series
- -
- Power Dissipation (Max)
- 42W (Tc)