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Infineon Technologies IPS80R2K4P7AKMA1
MOSFET N-CH 800V 2.5A TO251-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.85
- Stock
- 1490
Product Details
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 7.5nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 800V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 150pF @ 500V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 2.5A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Vgs(th) (Max) @ Id
- 3.5V @ 40µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2.4Ohm @ 800mA, 10V
- Series
- CoolMOS™ P7
- Power Dissipation (Max)
- 22W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO251-3