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Infineon Technologies IPS65R1K4C6AKMA1
MOSFET N-CH 650V 3.2A TO-251
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.91
- Stock
- 1586
Product Details
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 20mOhm @ 9.5A, 10V
- Series
- PowerTrench®
- Power Dissipation (Max)
- 2.8W (Ta), 36W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- D-PAK (TO-252)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 9.4nC @ 5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 660pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 9.5A (Ta), 30A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63