Infineon Technologies IPS60R2K1CEAKMA1

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3350pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Vgs(th) (Max) @ Id

1.2V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

9.5mOhm @ 3.6A, 4.5V

Series

-

Power Dissipation (Max)

2W (Ta)

FET Type

P-Channel

Supplier Device Package

PowerDI3333-8

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

103nC @ 10V

Vgs (Max)

±10V

Drain to Source Voltage (Vdss)

20V