Infineon Technologies IPS60R1K0CEAKMA1

Product Details

Series

Automotive, AEC-Q101

Power Dissipation (Max)

2.3W (Ta), 35.7W (Tc)

FET Type

N-Channel

Supplier Device Package

PowerDI3333-8 (SWP) Type UX

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

823pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 50A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

3.8V, 10V

Mounting Type

Surface Mount, Wettable Flank

Package / Case

8-PowerVDFN

Vgs(th) (Max) @ Id

3V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

11mOhm @ 14.4A, 10V