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Infineon Technologies IPP90R800C3XKSA1
MOSFET N-CH 900V 6.9A TO-220
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 2.22
- Stock
- 10510
Product Details
- Series
- CoolMOS™
- Power Dissipation (Max)
- 192W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO263-3-2
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 52nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2000pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 21A (Tc)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 3.5V @ 790µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 165mOhm @ 12A, 10V