Infineon Technologies IPP90N06S4L04AKSA1

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

120V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

4310pF @ 60V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-251-3 Stub Leads, IPak

Vgs(th) (Max) @ Id

4V @ 83µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

11mOhm @ 75A, 10V

Series

OptiMOS™

Power Dissipation (Max)

136W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO251-3

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V