Infineon Technologies IPP80N06S407AKSA2

Product Details

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

26mOhm @ 25A, 10V

Power Dissipation (Max)

110W (Tc)

Series

HEXFET®

Supplier Device Package

D-PAK (TO-252AA)

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Packaging

Tape & Reel (TR)

Drain to Source Voltage (Vdss)

75V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Part Status

Active

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63