Images are for reference only. See Product Specifications for product details
Infineon Technologies IPP65R150CFDAAKSA1
MOSFET N-CH 650V TO-220-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 2.83
- Stock
- 0
Product Details
- Series
- HiPerFET™, PolarHT™
- Power Dissipation (Max)
- 300W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-263 (IXFA)
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 43nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 500V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2250pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 16A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 5.5V @ 2.5mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 400mOhm @ 8A, 10V