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Infineon Technologies IPP60R600P6XKSA1
MOSFET N-CH 600V 7.3A TO220
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Type
- N-Channel
- Power Dissipation (Max)
- 163W (Tc)
- Packaging
- Tube
- Supplier Device Package
- D-Pak
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 155nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 40V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 5171pF @ 25V
- Part Status
- Discontinued at Digi-Key
- Current - Continuous Drain (Id) @ 25°C
- 100A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number
- IRFR8405
- Vgs(th) (Max) @ Id
- 3.9V @ 100µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Series
- HEXFET®
- Rds On (Max) @ Id, Vgs
- 1.98mOhm @ 90A, 10V