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Infineon Technologies IPP60R199CPXKSA1

MOSFET N-CH 650V 16A TO220-3

Manufacturer
Infineon Technologies
Datasheet
Price
3.44
Stock
492

Product Details

Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
5330pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
4.1V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
56mOhm @ 30A, 10V
Series
-
Power Dissipation (Max)
658W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-247
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
106nC @ 10V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
300V