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Infineon Technologies IPP60R180P7XKSA1
MOSFET N-CH 650V 18A TO220-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 2.41
- Stock
- 893
Product Details
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 100V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 1640pF @ 50V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 45A (Tc)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-220-3
- Base Part Number
- STP45N
- Vgs(th) (Max) @ Id
- 4.5V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Series
- DeepGATE™, STripFET™ VII
- Rds On (Max) @ Id, Vgs
- 18mOhm @ 22.5A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 60W (Tc)
- Packaging
- Tube
- Supplier Device Package
- TO-220
- Vgs (Max)
- 20V
- Gate Charge (Qg) (Max) @ Vgs
- 25nC @ 10V