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Infineon Technologies IPP60R145CFD7XKSA1
HIGH POWER_NEW
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 2.07
- Stock
- 0
Product Details
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 24.3nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 1000V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 655pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 2A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 4.5V @ 100µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 7.5Ohm @ 500mA, 10V
- Series
- Polar™
- Power Dissipation (Max)
- 86W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-252, (D-Pak)