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Infineon Technologies IPP60R120P7XKSA1
MOSFET N-CH 600V 26A TO220-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 3.47
- Stock
- 2255
Product Details
- Technology
- SiCFET (Silicon Carbide)
- Input Capacitance (Ciss) (Max) @ Vds
- 150pF @ 600V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 11.5A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 15V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 3.5V @ 1.2mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 360mOhm @ 7.5A, 15V
- Series
- C3M™
- Power Dissipation (Max)
- 54W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-247-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 9.5nC @ 15V
- Vgs (Max)
- +18V, -8V
- Drain to Source Voltage (Vdss)
- 900V