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Infineon Technologies IPP16CN10NGXKSA1
MOSFET N-CH 100V 53A TO-220
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 1.53
- Stock
- 167
Product Details
- Series
- HiPerFET™, Polar3™
- Power Dissipation (Max)
- 114W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-252
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 6.9nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 365pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 4A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2.2Ohm @ 2A, 10V