Infineon Technologies IPP030N10N5AKSA1

Product Details

Rds On (Max) @ Id, Vgs

1.7mOhm @ 195A, 10V

Series

HEXFET®

Power Dissipation (Max)

380W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-247AC

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

330nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

8920pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

195A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-247-3

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)