Infineon Technologies IPP028N08N3GXKSA1

Product Details

Vgs(th) (Max) @ Id

2.4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

0.75mOhm @ 100A, 10V

Series

Automotive, AEC-Q101, HEXFET®

Power Dissipation (Max)

375W (Tc)

FET Type

N-Channel

Supplier Device Package

D2PAK (7-Lead)

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

266nC @ 4.5V

Vgs (Max)

±16V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

16488pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

240A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)